Solar Wafer
Item |
Specification |
Unit |
Remarks |
| Crystal Growth Method | C |
-- |
|
| Conductivity Type | P |
-- |
|
| Dopant | Boron |
-- |
|
| Resistivity | 0.5 ~ 3.0 |
Ohm-cm |
|
| Oxygen Contents | < 8 x E17 at/cm3 |
ASTM F121-83 | |
| Carbon Contents | < 1 x E18 at/cm3 |
||
| Lifetime | ≧ 2.0 |
us |
Brick Level |
| Square length | 156 ± 0.5 |
mm |
|
| Thickness | 200 ± 20 |
μm |
Center Point |
| TTV | ≦ 40 |
μm |
|
| Bevel Width | 0.5~2.0 |
mm |
|
| Warp | ≦ 100 |
μm |
|
| Edge Chips | ≦ 0.5 |
mm |
De-stressed |
| Front Surface | As wire-saw |
-- |
Length <1.5 mm ; (Max 1 pcs/w) |
| Back Surface | As wire-saw |
-- |
|
| Appearance | Free of cracks, craw feet, foreign material ; Saw mark depth < 15 um ; Total micro-grain area /w < 2 cm2 |
||
| Packing | Shrink wrap ; per 100 wafers | ||
| Note | A+ Grade ; Angle between square sides : 90 deg. +/-18' | ||