Sapphire Wafer
2-inch Sapphire Substrates
Item |
Specification |
Unit |
| Material | >99.99% Single Crystal Al2O3 |
|
| Orientation | C-axis[0001] tiled M-axis 0.2 ± 0.1° |
Degree |
| Primary Flat | A-Axis [11-20] ± 0.2° |
Degree |
| Diameter | 50.80 ± 0.15 |
mm |
| Thickness | 430 ± 15 |
μm |
| Flat Length | 16 mm ± 0.5 |
mm |
| TTV | ≦ 10 |
um |
| Bow | -10 ~ 0 |
um |
| Warp | ≦15 |
um |
| LTV | ≦10 |
um |
| TIR | ≦10 |
um |
| Frontside Surface Roughness | ≦10 |
Å |
| Backside Surface Roughness | 0.8 ≦ Ra ≦1.2 |
um |
| Wafer Edge | R-Type |
|
| Laser Mark | Front side |
|
| Package | 25 wafers in one cassette |
|
| Other specifications are available upon request. | ||
4-inch Sapphire Substrates
Item |
Specification |
Unit |
| Material | >99.99% Single Crystal Al2O3 |
|
| Orientation | C-axis[0001] tiled M-axis 0.2 ± 0.1° |
Degree |
| Primary Flat | A-Axis [11-20] ± 0.2° |
Degree |
| Diameter | 100 ± 0.25 |
mm |
| Thickness | 650 ± 20 |
μm |
| Flat Length | 31 mm ± 1 |
mm |
| TTV | ≦ 20 |
um |
| Bow | -20 ~ 0 |
um |
| Warp | ≦50 |
um |
| LTV | ≦15 |
um |
| TIR | ≦15 |
um |
| Frontside Surface Roughness | ≦10 |
Å |
| Backside Surface Roughness | 0.6 ≦ Ra ≦1.2 |
um |
| Wafer Edge | R-Type |
|
| Laser Mark | Front side |
|
| Package | 25 wafers in one cassette |
|
| Other specifications are available upon request. | ||